CVD is a widely used method for depositing thin films of a large variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. In a typical CVD process, reactant gases (often diluted in a carrier gas) at room temperature enter the reaction chamber. The gas mixture is heated as it approaches the deposition surface, heated radiatively or placed upon a heated substrate. Depending on the process and operating conditions, the reactant gases may undergo homogeneous chemical reactions in the vapor phase before striking the surface. There is a great variety of chemical vapor deposition processes such as:
atmospheric pressure chemical vapor deposition (APCVD)
low pressure chemical vapor deposition (LPCVD)
plasma assisted (enhanced) chemical vapor deposition (PACVD, PECVD)
PECVD Process - Institute for Semiconductor Electronics
photochemical vapor deposition (PCVD)
laser chemical vapor deposition (LCVD)
metal-organic chemical vapor deposition (MOCVD)
MOCVD Definitions - MOCVD.com
chemical beam epitaxy (CBE)
chemical vapor infiltration (CVI)
See also: Cladding, Electroplating, Pack cementation, Electroless plating, Vapor deposition, Hot dip galvanizing, Thermal spraying